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1996
Home>Publications>1996
S.K. Ray, S. John, S. Oswal & S.K. Banerjee, "Novel SiGeC channel heterojunction pMOSFET", International Electron Devices Meeting, Technical Digest (pp. 261-264), IEEE. DOI: 10.1109/IEDM.1996.553580
M. Mukhopadhyay, S.K. Ray & C.K. Maiti, "Microwave plasma nitridation of Si (100), Ge (100), and Si1-xGex surfaces: A comparative study", Journal of Vacuum Science & Technology B, 14(3), 1682-1686. DOI: 10.1116/1.589210
A. Sarkar, S.K. Ray, A. Dhar, D. Bhattacharya & K.L. Chopra, "In situ grown superconducting YBCO films on buffered silicon substrates for device applications", Journal of superconductivity, 9(2), 217-222. DOI: 10.1007/BF00728306
P.A. Kumar, B. Panda, S.K. Ray, B.K. Mathur, D. Bhattacharya & K.L. Chopra, "Effect of electrode microstructure on leakage current in lead–lanthanum–zirconate–titanate multilayer capacitors", Applied physics letters, 68(10), 1344-1346. DOI: 10.1063/1.115929
M. Mukhopadhyay, S.K. Ray, T.B. Ghosh, M. Sreemany & C.K. Maiti, "Interface properties of thin oxide layers grown on strained SiGe layers at low temperatures", Semiconductor science and technology, 11(3), 360. DOI: 10.1088/0268-1242/11/3/014
S.K. Ray, C.K. Maiti, S.K. Lahiri & N.B. Chakrabarti, "TEOS‐based PECVD of silicon dioxide for VLSI applications", Advanced materials for optics and electronics, 6(2), 73-82. DOI: 10.1002/(SICI)1099-0712(199603)
M. Mukhopadhyay, S.K. Ray, D.K. Nayak & C.K. Maiti, "Ultrathin oxides using N2O on strained Si1-xGex layers", Applied physics letters, 68(9), 1262-1264. DOI: 10.1063/1.115946
B. Panda, S.K. Ray, A. Dhar, A. Sarkar, D. Bhattacharya & K.L. Chopra, "Electron beam deposited lead‐lanthanum‐zirconate‐titanate thin films for silicon based device applications", Journal of applied physics, 79(2), 1008-1012. DOI: 10.1063/1.360887
S. John, E.J. Quinones, B.F. Ferguson, S.K. Ray, C.B. Mullins & S.K. Banerjee, "Surface Morphology of Si1GeC Epitaxial Films Deposited by Low Temperature UHV-CVD", Mat. Res. Soc. Symp. Proc.: Structure and Evolution of Surfaces, Volume 440, 275. DOI: 10.1557/PROC-440-275
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