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1997
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S. Chattopadhyay, L.K. Bera, K. Maharatna, S. Chakrabarti, S. Dhar, S.K. Ray & C.K. Maiti, "Schottky diode characteristics of Ti on strained-Si", Solid-State Electronics, 41(12), 1891-1893. DOI: 10.1016/S0038-1101(97)00143-3
K.C. Liu, S.K. Oswal, S.K. Ray & S.K. Banerjee, "SiGe/Si vertical PMOSFET device design and fabrication", Microelectronic Device Technology (Vol. 3212, pp. 336-341), International Society for Optics and Photonics. DOI: 10.1117/12.284608
S. John, S.K. Ray, S.K. Oswal & S.K. Banerjee, "Strained Si NMOSFET on relaxed Si1-xGex formed by ion implantation of Ge", Microelectronic Device Technology (Vol. 3212, pp. 129-133), International Society for Optics and Photonics. DOI: 10.1117/12.284584
S. John, S.K. Ray, S.K. Oswal & S.K. Banerjee, "Si1-x-yGexCy channel heterojunction PMOSFETs", Microelectronic Device Technology (Vol. 3212, pp. 354-359), International Society for Optics and Photonics. DOI: 10.1117/12.284611
S. Chattopadhyay, L.K. Bera, S.K. Ray & C.K. Maiti, "Pt/p-strained-Si Schottky diode characteristics at low temperature", Applied physics letters, 71(7), 942-944. DOI: 10.1063/1.119696
L.C. Liu, S.K. Ray, S.K. Oswal, N.B. Chakraborti, R.D. Chang, D.L. Kencke & S.K. Banerjee, "Enhancement of drain current in vertical SiGe/Si PMOS transistors using novel CMOS technology", Device Research Conference Digest (pp. 128-129). IEEE. DOI: 10.1109/DRC.1997.612500
M.N. Islam, D.K. Basa, M. Mukhopadhyay, L.K. Bera, S.K. Ray, H.D. Banerjee & C.K. Maiti, "Schottky Barrier Height of Ti on Strained Layer Si/Si1-xGex Films", IETE Journal of Research, 43(2-3), 179-184. DOI: 10.1080/03772063.1997.11415976
M. Mukhopadhyay, L.K. Bera, S.K. Ray & C.K. Maiti, "Ultrathin Oxides on Strained Epitaxial Si1–xGex Films at Low Temperature", IETE Journal of Research, 43(2-3), 165-177. DOI: 10.1080/03772063.1997.11415975
M. Mukhopadhyay, L.K. Bera, S.K. Ray, S.N. Sahu, B.R. Mehta, N. Goswami, ..... & C.K. Maiti, "Characterization of Strained Epitaxial Si1–x Ge x Films Grown using Gas Source Molecular Beam Epitaxy", IETE Journal of Research, 43(2-3), 155-163. DOI: 10.1080/03772063.1997.11415974
S.K. Ray, D.W. McNeill, D.L. Gay, C.K. Maiti, G.A. Armstrong, B.M. Armstrong & H.S. Gamble, "Comparison of Si1− yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition", Thin Solid Films, 294(1-2), 149-152. DOI: 10.1016/S0040-6090(96)09389-3
L.K. Bera, M. Mukhopadhyay, S.K. Ray, D.K. Nayak, N. Usami, Y. Shiraki & C.K. Maiti, "Oxidation of strained Si in a microwave electron cyclotron resonance plasma", Applied physics letters, 70(2), 217-219. DOI: 10.1063/1.118370
L.K. Bera, S.K. Ray, D.K. Nayak, N. Usami, Y. Shiraki, & C.K. Maiti, "Electrical properties of oxides grown on strained Si using microwave N 2 O plasma", Applied physics letters, 70(1), 66-68. DOI: 10.1063/1.119308
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