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1998
Home>Publications>1998
A.K. Kar, A. Dhar, S.K. Ray, B.K. Mathur, D. Bhattacharya & K.L. Chopra, "Scanning tunnelling microscopic and spectroscopic investigation of .... boundaries of giant magnetoresistive manganites", Journal of Physics: Condensed Matter, 10(48), 10795. DOI: 10.1088/0953-8984/10/48/003
S. Chattopadhyay, L.K. Bera, C.K. Maiti, S.K. Ray, P.K. Bose, D. Dentel, ... & J.L. Bischoff, "Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes", Journal of Materials Science: Materials in Electronics, 9(6), 403-407. DOI: 10.1023/A:1008948500597
S. Chattopadhyay, L.K. Bera, S.K. Ray, P.K. Bose & C.K. Maiti, "Extraction of interface state density of Pt/p-strained-Si Schottky diode", Thin Solid Films, 335(1-2), 142-145. DOI: 10.1016/S0040-6090(98)00892-X
S.K. Ray, L.K. Bera, C.K. Maiti, S. John & S.K. Banerjee, "MOS capacitor characteristics of plasma oxide on partially strained SiGeC films", Thin solid films, 332(1-2), 375-378. DOI: 10.1016/S0040-6090(98)01040-2
B. Panda, A. Dhar, G.D. Nigam, D. Bhattacharya & S.K. Ray, "Optical properties of RF sputtered strontium substituted barium titanate thin films", Thin Solid Films, 332(1-2), 46-49. DOI: 10.1016/S0040-6090(98)01012-8
L.K. Bera, H.D. Banerjee, S.K. Ray, M. Mukhopadhyay & C.K. Maiti, "Microwave plasma nitridation of silicon dioxide on strained Si", Applied physics letters, 73(11), 1559-1561. DOI: 10.1063/1.122204
L.K. Bera, S.K. Ray, H.D. Banerjee & C.K. Maiti, "Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate", Bulletin of Materials Science, 21(4), 283-286. DOI: 10.1007/BF02744953
L.K. Bera, S.K. Ray, M. Mukhopadhyay, D.K. Nayak, N. Usami, Y. Shiraki & C.K. Maiti, "Electrical properties of N2O/NH3 plasma grown oxynitride on strained-Si", IEEE Electron Device Letters, 19(8), 273-275. DOI: 10.1109/55.704397
C. Saha, L.K. Bera, S.K. Ray, C.K. Maiti & S.K. Lahiri, "Electrical properties of thin polyoxides grown at a low temperature using microwave oxygen plasma", Semiconductor science and technology, 13(6), 599. DOI: 10.1088/0268-1242/13/6/010
C. Saha, S. Das, S.K. Ray & S.K. Lahiri, "Ion assisted growth and characterization of polycrystalline silicon and silicon-germanium films", Journal of applied physics, 83(8), 4472-4476. DOI: 10.1063/1.367209
S.K. Ray, L.K. Bera, C.K. Maiti, S. John & S.K. Banerjee, "Electrical characteristics of plasma oxidized Si1-x-yGexCy metal–oxide–semiconductor capacitors", Applied physics letters, 72(10), 1250-1252. DOI: 10.1063/1.121028
D. Dentel, L. Kubler, J.L. Bischoff, S. Chattopadhyay, L.K. Bera, S.K. Ray & C.K. Maiti, "Molecular beam epitaxial growth of strained layers on graded for Pt silicide Schottky diodes", Semiconductor science and technology, 13(2), 214. DOI: 10.1088/0268-1242/13/2/010
B. Panda, A. Dhar, G.D. Nigam, D. Bhattacharya & S.K. Ray, "Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate", Journal of applied physics, 83(2), 1114-1119. DOI: 10.1063/1.366802
K.C. Liu, S.K. Ray, S.K. Oswal & S.K. Banerjee, "A deep submicron Si1-xGex/Si vertical PMOSFET fabricated by Ge ion implantation", IEEE Electron Device Letters, 19(1), 13-15. DOI: 10.1109/55.650338
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