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1999
Home>Publications>1999
A.K. Kar, A. Dhar, S.K. Ray, B.K. Mathur, D. Bhattacharya & K.L. Chopra, "Scanning tunneling microscopy and spectroscopy of La0.67Ca0.33MnO3 thin films grown on LaAlO3 (100)", Materials Science and Engineering: B, 68(1), 10-15. DOI: 10.1016/S0921-5107(99)00339-6
S. John, E.J. Quinones, B. Ferguson, S.K. Ray, B. Anantharam, S. Middlebrooks, ... & S.K. Banerjee, "Properties of Si1− x− yGexCy Epitaxial Films Grown by Ultrahigh Vacuum Chemical Vapor Deposition", Journal of the Electrochemical Society, 146(12), 4611-4618. DOI: 10.1149/1.1392682
C. Saha, S.K. Ray & S.K. Lahiri, "Ion-assisted low-temperature oxidation for fabrication of strained Si1-xGex and Si1-x-yGexCy MOS capacitors", Semiconductor science and technology, 14(11), 984. DOI: 10.1088/0268-1242/14/11/307
S. Maikap, L.K. Bera, S.K. Ray & C.K. Maiti, "NO/O2/NO plasma-grown oxynitride films on strained Si1-x/Gex", Electronics Letters, 35(14), 1202-1203. DOI: 10.1049/el:19990770
E. Quinones, S.K. Ray, K.C. Liu & S. Banerjee, "Enhanced mobility P-MOSFETs using tensile-strained Si1-yCy layers", IEEE Electron Device Letters, 20(7), 338-340. DOI: 10.1109/55.772369
S. John, S.K. Ray, E. Quinones & S.K. Banerjee, "Strained Si n-channel metal–oxide–semiconductor transistor on relaxed Si1-xGex formed by ion implantation of Ge", Applied physics letters, 74(14), 2076-2078. DOI: 10.1063/1.123762
S. John, S.K. Ray, E. Quinones, S.K. Oswal & S.K. Banerjee, "Heterostructure P-channel metal–oxide–semiconductor transistor utilizing a Si1- x- yGexCy channel", Applied physics letters, 74(6), 847-849. DOI: 10.1063/1.123386
L.K. Bera, S.K. Ray, D.K. Nayak, N. Usami, Y. Shiraki & C.K. Maiti, "Gas source molecular beam epitaxy grown strained-Si films on step-graded relaxed Si1-xGex for MOS applications", Journal of electronic materials, 28(2), 98-104. DOI: 10.1007/s11664-999-0225-5
B. Panda, G.D. Nigam & S.K. Ray, "Thickness dependence of dielectric constant in barium strontium titanate thin films", NISCAIR, 37(04) [link]
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