top of page
2000
Home>Publications>2000
S. Pal, S.K. Ray, S. Lahiri & D.N. Bose, "Ga2O3 (Gd2O3) film as high-k gate dielectric for SiGe MOSFET devices", Electronics Letters, 36(24), 2044-2046. DOI: 10.1049/el:20001410
E.K. Quinones, S. John, S.K. Ray & S.K. Banerjee, "Design, fabrication, and analysis of SiGeC heterojunction PMOSFETs", IEEE Transactions on Electron Devices, 47(9), 1715-1725. DOI: 10.1109/16.861582
G.S. Kar, A. Dhar, S.K. Ray, S. John & S.K. Banerjee, "Hall mobilities in B-doped strained Si1− xGex and Si1− x− yGexCy layers grown by ultrahigh vacuum chemical vapor deposition", Journal of Applied Physics, 88(4), 2039-2042. DOI: 10.1063/1.1305927
S.K. Ray, B. Mohanty, S. Tripathy & G.S. Roy, "Evaluation of Excess Gibbs Energy of Mixing in Binary Mixtures of Di-Isobutyl Ketone (Dibk) and Nonpolar Solvents", Physics and Chemistry of Liquids, 38(4), 415-421. DOI: 10.1080/00319100008030288
S. Maikap, S.K. Ray, S. John, S.K. Banerjee & C.K. Maiti, "Electrical characterization of ultra-thin gate oxides on Si/Si1-x-yGexCy/Si quantum well heterostructures", Semiconductor science and technology, 15(7), 761. DOI: 10.1088/0268-1242/15/7/317
S. Maikap, L.K. Bera, S.K. Ray, S. John, S.K. Banerjee & C.K. Maiti, "Electrical characterization of Si/Si1− xGex/Si quantum well heterostructures using a MOS capacitor", Solid-State Electronics, 44(6), 1029-1034. DOI: 10.1016/S0038-1101(99)00327-5
S. Gangopadhyay, A.K. Kar, S.K. Ray & B.K. Mathur, "An inexpensive up-gradation of scanning tunneling microscope for ballistic electron emission microscopy and spectroscopy", Applied surface science, 156(1-4), 183-188. DOI: 10.1016/S0169-4332(99)00507-3
S. Pal, S.K. Ray, S. Lahiri & D.N. Bose, "Ga2O3 (Gd2O3) film as high-k gate dielectric for SiGe MOSFET devices", Electronics Letters, 36(24), 2044-2046. DOI: 10.1049/el:20001410
C.K. Maiti, L.K. Bera, S. Maikap, S.K. Ray, N.B. Chakrabarti, R. Kesavan & V. Kumar, "Growth of silicon-germanium alloy layers", Defence Science Journal, 50(3), 299-315. [Link]
bottom of page