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2001
Home>Publications>2001
X. Chen, K.C. Liu, S. Ray & S. Banerjee, "Bandgap engineering in vertical P-MOSFETs", Solid-State Electronics, 45(11), 1939-1943. DOI: 10.1016/S0038-1101(01)00237-4
S.K. Ray, S. Maikap, S.K. Samanta, S.K. Banerjee & C.K. Maiti, "Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers", Solid-State Electronics, 45(11), 1951-1955. DOI: 10.1016/S0038-1101(01)00239-8
S.K. Ray, G.S. Kar & S.K. Banerjee, "Characteristics of UHVCVD grown Si/Si1-x-yGexCy/Si quantum well heterostructure", Applied surface science, 182(3-4), 361-365. DOI: 10.1016/S0169-4332(01)00449-4
S. Pal, S.K. Ray, B.R. Chakraborty, S.K. Lahiri & D.N. Bose, "Gd2O3, Ga2O3 (Gd2O3), Y2O3, and Ga2O3, as high-k gate dielectrics on SiGe: A comparative study", Journal of Applied Physics, 90(8), 4103-4107. DOI: 10.1063/1.1405134
C.B. Samantaray, A. Dhar, D. Bhattacharya, .... & S.K. Ray, "Effect of post-deposition annealing on microstructural and optical properties of barium strontium titanate thin films deposited by rf magnetron sputtering", Journal of Materials Science, 12(7), 365-370. DOI: 10.1023/A:1011222312230
G.S. Kar, S.K. Ray, T. Kim, S.K. Banerjee & N.B. Chakrabarti, "Estimation of hole mobility in strained Si1-xGex buried channel heterostructure PMOSFET", Solid-State Electronics, 45(5), 669-676. DOI: 10.1016/S0038-1101(01)00096-X
S. Maikap, S.K. Ray, S.K. Banerjee & C.K. Maiti, "Electrical properties of O2/NO-plasma grown oxynitride films on partially strain compensated Si/Si1-x-yGexCy/Si heterolayers", Semiconductor science and technology, 16(3), 160. DOI: 10.1088/0268-1242/16/3/307
C.B. Samantaray, A. Dhar & S.K. Ray, "Optical and Infrared Studies of BaxSr1-xTiO3 Thin Film", Indian Journal of Physics, 75, 347-350. DOI: 10.1088/0268-1242/16/3/307
C.K. Maiti, N.B. Chakrabarti & S.K. Ray, "Strained silicon heterostructures: materials and devices", BOOK: Springer (No. 12). IET. [Link]
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