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2002

R. Mahapatra, G.S. Kar, C.B. Samantaray, A. Dhar, D. Bhattacharya & S.K. Ray, "ZrO2 as a high-K dielectric for strained SiGe MOS devices", Bulletin of Materials Science, 25(6), 455-457. DOI: 10.1007/BF02710526

R. Mahapatra, S. Maikap, G.S. Kar & S.K. Ray, "Electrical properties of plasma-grown gate oxides on tensile-strained Si1− yCy alloy", Electronics Letters, 38(17), 1000-1001. DOI: 10.1049/el:20020541

G.S. Kar, S. Maikap, S.K. Banerjee & S.K. Ray, "Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal–oxide semiconductor field-effect transistors", Semiconductor science and technology, 17(9), 938. DOI: 10.1088/0268-1242/17/9/306

B. Panda, C.B. Samantaray, A. Dhar, S.K. Ray & D. Bhattacharya, "Electrical properties of rf magnetron sputtered BaxSr1−xTiO3 films on multi-layered bottom electrodes for high-density memory application", Journal of Materials Science, 13(5), 263-268. DOI: 10.1023/A:1015591020730

G.S. Kar, S. Maikap, S.K. Ray, S.K. Banerjee & N.B. Chakrabarti, "Effective mobility and alloy scattering in the strain compensated SiGeC inversion layer", Semiconductor science and technology, 17(5), 471. DOI: 10.1088/0268-1242/17/5/311

G.S. Kar, S. Maikap, S.K. Banerjee & S.K. Ray, "Hole velocity overshoot in partially strain compensated Si0.793Ge0.2C0.007 inversion layers", Electronics Letters, 38(3), 141-142. DOI: 10.1049/el:20020095

C.B. Samantaray, A. Dhar, M.L. Mukherjee, D. Bhattacharya & S.K. Ray, "RF magnetron sputtered high-k barium strontium titanate thin films on magnetoresistive La0.7Ca0.3MnO3 electrode", Materials Science and Engineering: B, 88(1), 14-17. DOI: 10.1016/S0921-5107(01)00753-X

G.S. Kar, A. Dhar, L.K. Bera, S.K. Ray, S. John & S.K. Banerjee, "Effect of carbon on lattice strain and hole mobility in Si1-xGex alloys", Journal of Materials Science: Materials in Electronics, 13(1), 49-55. DOI: 10.1023/A:101310323

C.B. Samantaray, A. Roy, M. Roy, M.L. Mukherjee & S.K. Ray, "Vibrational spectroscopic studies on Ba0.8Sr0.2TiO3 thin films prepared by RF sputtering technique", Journal of Physics and Chemistry of Solids, 63(1), 65-69. DOI: 10.1016/S0022-3697(01)00050-6

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