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2003
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I.V. Altukhov, E.G. Chirkova, V.P. Sinis, M.S. Kagan, R.T. Troeger, S.K. Ray, ... & I.N. Yassievich, "Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures", Physica B: Condensed Matter, 340, 831-834. DOI: 10.1016/j.physb.2003.09.219
K. Das, S. Maikap, A. Dhar, B.K. Mathur & S.K. Ray, "Metal-oxide-semiconductor structure with Ge nanocrystals for memory devices applications", Electronics Letters, 39(25), 1865-1866. DOI: 10.1049/el:20031146
R. Mahapatra, S. Maikap, J.H. Lee, ... & S.K. Ray, "Structural and electrical characteristics of the interfacial layer of ultrathin ZrO2 films on partially strain compensated Si0.69Ge0.3C0.01 layers", Journal of Vacuum Science & Technology A, 21(5), 1758-1764. DOI: 10.1116/1.1603279
T.N. Adam, R.T. Troeger, S.K. Ray, P.C. Lv & J. Kolodzey, "Terahertz electroluminescence from boron-doped silicon devices", Applied physics letters, 83(9), 1713-1715. DOI: 10.1063/1.1605263
J.H. Lee, S. Maikap, D.Y. Kim, R. Mahapatra, S.K. Ray, Y.S. No & W.K. Choi, "Characteristics of ultrathin HfO2 gate dielectrics on strained Si0.74Ge0.26 layers", Applied physics letters, 83(4), 779-781. DOI: 10.1063/1.1589165
R. Mahapatra, S. Maikap, J.H. Lee, G.S. Kar, A. Dhar .. & S.K. Ray, "Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers", Applied physics letters, 82(24), 4331-4333. DOI: 10.1063/1.1583143
R. Mahapatra, J.H. Lee, S. Maikap, G.S. Kar, A. Dhar, N.M. Hwang, ... & S.K. Ray, "Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure", Applied physics letters, 82(14), 2320-2322. DOI: 10.1063/1.1566480
S. Pal, R. Mahapatra, S.K. Ray, B.R. Chakraborty, S.M. Shivaprasad, S.K. Lahiri & D.N. Bose, "Microwave plasma oxidation of gallium nitride", Thin Solid Films, 425(1-2), 20-23. DOI: 10.1016/S0040-6090(02)01055-6
M.S. Kagan, I.V. Altukhov, E.G. Chirkova, V.P. Sinis, R.T. Troeger, S.K. Ray & J. Kolodzey, "THz lasing due to resonant acceptor states in strained p‐Ge and SiGe quantum‐well structures", physica status solidi (b), 235(2), 293-296. DOI: 10.1002/pssb.200301571
M.S. Kagan, I.V. Altukhov, E.G. Chirkova, V.P. Sinis, R.T. Troeger, S.K. Ray & J. Kolodzey, "THz lasing of SiGe/Si quantum‐well structures due to shallow acceptors", physica status solidi (b), 235(1), 135-138. DOI: 10.1002/pssb.200301536
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