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2004
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P.C. Lv, R.T. Troeger, S. Kim, S.K. Ray, K.W. Goossen, J. Kolodzey, I.N. Yassievich, M.A. Odnoblyudov & M.S. Kagan, "Terahertz emission from electrically pumped gallium doped silicon devices", Applied physics letters, 85(17), 3660-3662. 101-105. DOI: 10.1063/1.1808878
C.B. Samantaray, M.N. Goswami, D. Bhattacharya, S.K. Ray & H.N. Acharya, "Photoluminescence properties of Eu3+ -doped barium strontium titanate (Ba, Sr) TiO3 ceramics", Materials letters, 58(17-18), 2299-2301. DOI: 10.1016/j.matlet.2004.03.001
S.K. Ray, T.N. Adam, R.T. Troeger, J. Kolodzey, G. Looney & A. Rosen, "Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si1−XGex films", Journal of applied physics, 95(10), 5301-5304. DOI: 10.1063/1.1690487
K. Das, M. NandaGoswami, R. Mahapatra, G.S. Kar, A. Dhar, H.N. Acharya, S. Maikap, J.H. Lee & S.K. Ray, "Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures", Applied physics letters, 84(8), 1386-1388. DOI: 10.1063/1.1646750
J. Kolodzey, T.N. Adam, R.T. Troeger, P.C. Lv, S.K. Ray, I. Yassievich, M. Odnoblyudovi & M.S. Kagan, "Terahertz Emitters and Detectors Based on SiGe Nanostructures", International Journal of Nanoscience, 3(01n02), 171-176. DOI: 10.1142/S0219581X0400195X
S. Maikap, J.H. Lee, D.Y. Kim, R. Mahapatra, S.K. Ray, .. & W.K. Choi, "Physical and electrical properties of ultrathin HfO2/HfSixOy stacked gate dielectrics on strained Si0.74Ge0.26/Si heterolayers", Journal of Vacuum Science & Technology B, 22(1), 52-56. DOI: 10.1116/1.1633771
R. Mahapatra, G.S. Kar, S.K. Ray & S. Maikap, "Temperature-dependent electrical properties of plasma-grown gate oxides on tensile-strained Si0.993C 0.007 layers", Journal of Materials Science: Materials in Electronics, 15(1), 43-46. DOI: 10.1023/A:1026245021545
S.K. Ray, R. Mahapatra, S. Maikap, A. Dhar, D. Bhattacharya & J.H. Lee, "Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure", Materials science in semiconductor processing, 7(4-6), 203-208. DOI: 10.1016/j.mssp.2004.09.015
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