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2005
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R. Mahapatra, S. Maikap, A. Dhar, B.K. Mathur & S.K. Ray, "Characteristics of High-k ZrO2 Gate Dielectrics on O2/N2O Plasma Treated Si0.69Ge0.3C0.01/Si Heterolayers", Ferroelectrics, 329(1), 101-105. DOI: 10.1080/00150190500315715
S. Maikap, J.H. Lee, R. Mahapatra, S. Pal, ......., S.K. Ray & D.Y. Kim, "Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates", Solid-state electronics, 49(4), 524-528. DOI: 10.1016/j.sse.2004.10.009
R. Mahapatra, S. Maikap, G.S. Kar & S.K. Ray, "Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation", Solid-state electronics, 49(3), 449-452. DOI: 10.1016/j.sse.2004.11.010
I.V. Antonova, V.I. Obodnikov, M.S. Kagan, R.T. Troeger, S.K. Ray & J. Kolodzey, "Capacitance study of selectively doped SiGe/Si heterostructures", Semiconductor science and technology, 20(5), 335. DOI: 10.1088/0268-1242/20/5/001
S.K. Ray & K. Das, "Luminescence characteristics of Ge nanocrystals embedded in SiO2 matrix", Optical Materials, 27(5), 948-952. DOI: 10.1063/1.2227269
R.T. Troeger, T.N. Adam, S.K. Ray, P.C. Lv, S. Kim & J. Kolodzey, "Temperature dependence of terahertz emission from silicon devices doped with boron", High Performance Devices (pp. 46-51). DOI: 10.1142/9789812702036_0008
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