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2006
Home>Publications>2006
S. Rath, K. Das, S.N. Sarangi, A.K. Dash, S.K. Ray & S.N. Sahu, "Synthesis of LECBD grown cluster assembled SeO2 thin films", Applied Surface Science, 253(4), 2138-2142. DOI: 10.1016/j.apsusc.2006.04.035
B.B. Konar, S.K. Ray & P.B. Konar, "Studies on interfacial adhesion, tensile and thermal characteristics in blends of polystyrene/novalac resin", Journal of Applied Polymer Science, 102(5), 4630-4636. DOI: 10.1002/app.24556
V.S. Reddy, K. Das, A. Dhar & S.K. Ray, "The effect of substrate temperature on the properties of ITO thin films for OLED applications", Semiconductor science and technology, 21(12), 1747. DOI: 10.1088/0268-1242/21/12/043
S.K. Ray, R. Mahapatra & S. Maikap, "High-k gate oxide for silicon heterostructure MOSFET devices", Journal of Materials Science: Materials in Electronics, 17(9), 689-710. DOI: 10.1007/s10854-006-0015-2
R. Mahapatra, S. Maikap, J.H. Lee & S.K. Ray, "Characteristics of ZrO2 gate dielectrics on O2 and N2O plasma treated partially strain-compensated Si0.69Ge0.3C0.01 layers", Journal of Applied Physics, 100(3). DOI: 10.1063/1.2227269
R. Mahapatra, N. Poolamai, N. Wright, A.K. Chakraborty, K.S. Coleman, K. Das, S.K. Rayd, P. Coleman & P. Burrows, "Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices", ECS Transactions, 1(5), 33-40. DOI: 10.1149/1.2209253
R. Mahapatra, S. Maikap & S.K. Ray, "Electrical properties of ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructures", Journal of electroceramics, 16(4), 545-548. DOI: 10.1007/s10832-006-9915-z
S. Ray & S.K. Ray, "Permeation studies of tetrahydrofuran–water mixtures by pervaporation experiments", Separation and purification technology, 50(2), 156-160. DOI: 10.1016/j.seppur.2005.11.019
R. Singha, A. Dhar, D. Bhattacharya, M. Chakraborty, V. Srinivas & S.K. Ray, "Correlation between microstructure and electronic behaviour in rapidly quenched Fe-substituted granular Cu–Co alloys", Thin solid films, 505(1-2), 157-160. DOI: 10.1016/j.tsf.2005.10.029
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